DESIGN AND MODELLING OF RF GAN CLASS-E POWER AMPLIFIER FOR BROADBAND APPLICATIONS

Kupreyev, Dmitriy

DESIGN AND MODELLING OF RF GAN CLASS-E POWER AMPLIFIER FOR BROADBAND APPLICATIONS

dc.contributor.author	Kupreyev, Dmitriy
dc.date.accessioned	2021-06-08T06:00:44Z
dc.date.available	2021-06-08T06:00:44Z
dc.date.issued	2021-05
dc.description.abstract	This thesis work presents design and modelling of highly efficient class E power am- plifier for broadband applications. Nearly 900 MHz bandwidth has been achieved with the center frequency at 2.0 GHz. The PAE was more than 40% over the whole range with the maximum of 82% at 1.9 GHz. The maximum gain achieved was 12.2 dB with gain variations of less than 3dB. PA was designed using 10W GaN tran- sistor from Cree, which can operate on up to 6 GHz frequencies. Rogers RO3003 substrate was used for the device.	en_US
dc.identifier.citation	Kupreyev, D. (2021). Design and Modelling of RF GaN Class-E Power Amplifier for Broadband Applications (Unpublished master's thesis). Nazarbayev University, Nur-Sultan, Kazakhstan	en_US
dc.identifier.uri	http://nur.nu.edu.kz/handle/123456789/5455
dc.language.iso	en	en_US
dc.publisher	Nazarbayev University School of Engineering and Digital Sciences	en_US
dc.rights	Attribution-NonCommercial-ShareAlike 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-sa/3.0/us/	*
dc.subject	power amplifier	en_US
dc.subject	Research Subject Categories::TECHNOLOGY	en_US
dc.subject	PAE	en_US
dc.subject	Type of access: Open Access	en_US
dc.subject	RF power source	en_US
dc.subject	radio frequency	en_US
dc.subject	PA	en_US
dc.title	DESIGN AND MODELLING OF RF GAN CLASS-E POWER AMPLIFIER FOR BROADBAND APPLICATIONS	en_US
dc.type	Master's thesis	en_US
workflow.import.source	science