DESIGN AND MODELLING OF RF GAN CLASS-E POWER AMPLIFIER FOR BROADBAND APPLICATIONS
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Date
2021-05
Authors
Kupreyev, Dmitriy
Journal Title
Journal ISSN
Volume Title
Publisher
Nazarbayev University School of Engineering and Digital Sciences
Abstract
This thesis work presents design and modelling of highly efficient class E power am-
plifier for broadband applications. Nearly 900 MHz bandwidth has been achieved
with the center frequency at 2.0 GHz. The PAE was more than 40% over the whole
range with the maximum of 82% at 1.9 GHz. The maximum gain achieved was 12.2
dB with gain variations of less than 3dB. PA was designed using 10W GaN tran-
sistor from Cree, which can operate on up to 6 GHz frequencies. Rogers RO3003
substrate was used for the device.
Description
Keywords
power amplifier, Research Subject Categories::TECHNOLOGY, PAE, Type of access: Open Access, RF power source, radio frequency, PA
Citation
Kupreyev, D. (2021). Design and Modelling of RF GaN Class-E Power Amplifier for Broadband Applications (Unpublished master's thesis). Nazarbayev University, Nur-Sultan, Kazakhstan