DESIGN AND MODELLING OF RF GAN CLASS-E POWER AMPLIFIER FOR BROADBAND APPLICATIONS

Abstract

This thesis work presents design and modelling of highly efficient class E power amplifier for broadband applications. Nearly 900 MHz bandwidth has been achieved with the center frequency at 2.0 GHz. The PAE was more than 40% over the whole range with the maximum of 82% at 1.9 GHz. The maximum gain achieved was 12.2 dB with gain variations of less than 3dB. PA was designed using 10W GaN transistor from Cree, which can operate on up to 6 GHz frequencies. Rogers RO3003 substrate was used for the device.