DESIGN AND MODELLING OF RF GAN CLASS-E POWER AMPLIFIER FOR BROADBAND APPLICATIONS

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Date

2021-05

Authors

Kupreyev, Dmitriy

Journal Title

Journal ISSN

Volume Title

Publisher

Nazarbayev University School of Engineering and Digital Sciences

Abstract

This thesis work presents design and modelling of highly efficient class E power am- plifier for broadband applications. Nearly 900 MHz bandwidth has been achieved with the center frequency at 2.0 GHz. The PAE was more than 40% over the whole range with the maximum of 82% at 1.9 GHz. The maximum gain achieved was 12.2 dB with gain variations of less than 3dB. PA was designed using 10W GaN tran- sistor from Cree, which can operate on up to 6 GHz frequencies. Rogers RO3003 substrate was used for the device.

Description

Keywords

power amplifier, Research Subject Categories::TECHNOLOGY, PAE, Type of access: Open Access, RF power source, radio frequency, PA

Citation

Kupreyev, D. (2021). Design and Modelling of RF GaN Class-E Power Amplifier for Broadband Applications (Unpublished master's thesis). Nazarbayev University, Nur-Sultan, Kazakhstan