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Influence of plasma exposure on physical characteristics of thin films of SnO2 obtained from SnCl4 solutions with additives of NH4F and NH4OH

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dc.contributor.author Mukhamedshina, D.M.
dc.contributor.author Fedosimova, A. I.
dc.contributor.author Dmitrieva, E.A.
dc.contributor.author Lebedev, I. A.
dc.contributor.author Grushevskaya, E. A.
dc.contributor.author Ibraimova, S.A.
dc.contributor.author Mit, K.A.
dc.contributor.author Serikkanov, A.S.
dc.date.accessioned 2018-09-07T04:09:13Z
dc.date.available 2018-09-07T04:09:13Z
dc.date.issued 2018-08-08
dc.identifier.citation Mukhamedshina, D.M. et al. (2018) Influence of plasma exposure on physical characteristics of thin films of SnO2 obtained from SnCl4 solutions with additives of NH4F and NH4OH. The 6th International Conference on Nanomaterials and Advanced Energy Storage Systems. Institute of Batteries LLP, Nazarbayev University, and PI “National Laboratory Astana”. p76. en_US
dc.identifier.uri http://nur.nu.edu.kz/handle/123456789/3509
dc.description.abstract The electrical conductivity of tin dioxide is extremely sensitive to the state of the surface in the temperature range 300-800 K, at which oxidation-reduction reactions take place on its surface. Nanocrystalline films of tin dioxide are selectively sensitive to the presence of toxic gases, organic and certain biological molecules in the surrounding atmosphere [1]. SnO2-based films are also used as transparent conductive coatings [2]. To modify the properties of the films, alloying, heat treatment, plasma treatment is used. en_US
dc.language.iso en en_US
dc.publisher The 6th International Conference on Nanomaterials and Advanced Energy Storage Systems. Institute of Batteries LLP, Nazarbayev University, and PI “National Laboratory Astana”. en_US
dc.rights Attribution-NonCommercial-ShareAlike 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-sa/3.0/us/ *
dc.subject oxidation-reduction en_US
dc.title Influence of plasma exposure on physical characteristics of thin films of SnO2 obtained from SnCl4 solutions with additives of NH4F and NH4OH en_US
dc.type Abstract en_US
workflow.import.source science


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