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Статистика
Жалпы қатысу саны
| Көру | |
|---|---|
| High-performance, heteroepitaxial, nanolaminate device layers on single-crystal-like, artificial substrates and controlled self-assembly of anostructures within device layers for wide-ranging electrical and electronic applications | 119 |
Бір айдағы саны
| January 2024 | February 2024 | March 2024 | April 2024 | May 2024 | June 2024 | July 2024 | |
|---|---|---|---|---|---|---|---|
| High-performance, heteroepitaxial, nanolaminate device layers on single-crystal-like, artificial substrates and controlled self-assembly of anostructures within device layers for wide-ranging electrical and electronic applications | 1 | 4 | 5 | 4 | 0 | 10 | 0 |
Файлдарға жүгіну
| Көру | |
|---|---|
| High-performance, heteroepitaxial, nanolaminate device layers on single-crystal-like, artificial substrates and controlled self-assembly of anostructures within device layers for wide-ranging electrical and.pdf | 38 |
елдер бойынша
| Көру | |
|---|---|
| United States | 60 |
| China | 13 |
| Russia | 12 |
| Germany | 10 |
| Sweden | 7 |
| India | 4 |
| Iran | 2 |
| Argentina | 1 |
| Canada | 1 |
| France | 1 |
қалалар бойынша
| Көру | |
|---|---|
| Louisville | 15 |
| Moscow | 8 |
| Oakland | 8 |
| Beijing | 7 |
| Boardman | 6 |
| Shanghai | 5 |
| Andover | 4 |
| Bangalore | 4 |
| Menlo Park | 4 |
| San Jose | 4 |
Ұсыну нұсқаулығы