Crystallographic Characterisation of Ultra-Thin, or Amorphous Transparent Conducting Oxides—The Case for Raman Spectroscopy
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Caffrey, David
Zhussupbekova, Ainur
Vijayaraghavan, Rajani K.
Ainabayev, Ardak
Kaisha, Aitkazy
Sugurbekova, Gulnar
Shvets, Igor V.
Fleischer, Karsten
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MDPI
Abstract
The electronic and optical properties of transparent conducting oxides (TCOs) are closely
linked to their crystallographic structure on a macroscopic (grain sizes) and microscopic
(bond structure) level. With the increasing drive towards using reduced film thicknesses in
devices and growing interest in amorphous TCOs such as n-type InGaZnO4 (IGZO), ZnSnO3
(ZTO), p-type CuxCrO2, or ZnRh2O4, the task of gaining in-depth knowledge on their crystal
structure by conventional X-ray diffraction-based measurements are becoming increasingly difficult.
We demonstrate the use of a focal shift based background subtraction technique for Raman
spectroscopy specifically developed for the case of transparent thin films on amorphous substrates.
Using this technique we demonstrate, for a variety of TCOs CuO, a-ZTO, ZnO:Al), how changes
in local vibrational mo
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Citation
Caffrey, D., Zhussupbekova, A., Vijayaraghavan, R. K., Ainabayev, A., Kaisha, A., Sugurbekova, G., … Fleischer, K. (2020). Crystallographic characterisation of ultra-thin, or amorphous transparent conducting oxides-the case for Raman spectroscopy. Materials, 13(2). https://doi.org/10.3390/ma13020267
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