Obtaining of gallium nitride thin films

Abstract

The project executed by a joint team of the Nazarbayev University, Kazakhstan, Lawrence Berkeley National Laboratory, Berkeley, California. The project will start by developing the HiPIMS technology for GaN in an existing and upgraded vacuum chamber at partner laboratory (LBNL). This includes the design and modification of magnetrons for sputtering from liquid gallium target. In a parallel effort, components for a second deposition system will be purchased and a custom system will be developed for deployment at Astana.