Study of Peeling of Single Crystal Silicon by Intense Pulsed Ion Beam

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dc.contributor.authorYu, Xiao
dc.contributor.authorShen, Jie
dc.contributor.authorZhang, Jie
dc.contributor.authorZhong, Haowen
dc.contributor.authorCui, Xiaojun
dc.contributor.authorLiang, Guoying
dc.contributor.authorYan, Sha
dc.contributor.authorZhang, Gaolong
dc.contributor.authorZhang, Xiaofu
dc.contributor.authorLe, Xiaoyun
dc.date.accessioned2016-11-04T03:28:06Z
dc.date.available2016-11-04T03:28:06Z
dc.date.issued2016-07-18
dc.description.abstractThe surface peeling process induced by intense pulsed ion beam (IPIB) irradiation was studied. Single crystal silicon specimens were treated by IPIB with accelerating voltage of 350 kV current density of 130 A/cm2. It is observed that under smaller numbers of IPIB shots, the surface may undergo obvious melting and evaporation...ru_RU
dc.identifier.citationYu Xiao., Shen Jie., Zhang Jie., Zhong Haowen., Cui Xiaojun., Liang Guoying., Yan Sha., Zhang Gaolong., Zhang Xiaofu., Le Xiaoyun., (2016) Study of Peeling of Single Crystal Silicon by Intense Pulsed Ion Beam. 21st International Symposium on Heavy Ion Inertial Fusion. Book of Abstracts. http://nur.nu.edu.kz/handle/123456789/1802ru_RU
dc.identifier.urihttp://nur.nu.edu.kz/handle/123456789/1802
dc.language.isoenru_RU
dc.publisher21st International Symposium on Heavy Ion Inertial Fusion. Autonomous Organization of Education “Nazarbayev University”ru_RU
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectstudy of peeling of single crystal siliconru_RU
dc.subjection beamru_RU
dc.subjectResearch Subject Categories::NATURAL SCIENCES::Physics::Elementary particle physicsru_RU
dc.titleStudy of Peeling of Single Crystal Silicon by Intense Pulsed Ion Beamru_RU
dc.typeAbstractru_RU

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