Study of Peeling of Single Crystal Silicon by Intense Pulsed Ion Beam
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Date
2016-07-18
Authors
Yu, Xiao
Shen, Jie
Zhang, Jie
Zhong, Haowen
Cui, Xiaojun
Liang, Guoying
Yan, Sha
Zhang, Gaolong
Zhang, Xiaofu
Le, Xiaoyun
Journal Title
Journal ISSN
Volume Title
Publisher
21st International Symposium on Heavy Ion Inertial Fusion. Autonomous Organization of Education “Nazarbayev University”
Abstract
The surface peeling process induced by intense
pulsed ion beam (IPIB) irradiation was studied.
Single crystal silicon specimens were treated by
IPIB with accelerating voltage of 350 kV current
density of 130 A/cm2. It is observed that
under smaller numbers of IPIB shots, the surface
may undergo obvious melting and evaporation...
Description
Keywords
study of peeling of single crystal silicon, ion beam, Research Subject Categories::NATURAL SCIENCES::Physics::Elementary particle physics
Citation
Yu Xiao., Shen Jie., Zhang Jie., Zhong Haowen., Cui Xiaojun., Liang Guoying., Yan Sha., Zhang Gaolong., Zhang Xiaofu., Le Xiaoyun., (2016) Study of Peeling of Single Crystal Silicon by Intense Pulsed Ion Beam. 21st International Symposium on Heavy Ion Inertial Fusion. Book of Abstracts. http://nur.nu.edu.kz/handle/123456789/1802