Surface erosion and modification by highly charged ions

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dc.contributor.authorInsepov, Z.
dc.contributor.authorTerasawa, M.
dc.contributor.authorTakayama, K.
dc.date.accessioned2017-09-27T08:56:45Z
dc.date.available2017-09-27T08:56:45Z
dc.date.issued2008
dc.description.abstractAnalyses were conducted of various models and mechanisms of highly charged ion HCI and swift-heavy ion energy transfer into a solid target, such as hollow atom formation, charge screening, neutralization, shock wave generation, crater formation, and sputtering. A plasma model of space charge neutralization based on impact ionization of semiconductors at high electric fields was developed and applied to analyze HCI impacts on Si and W. Surface erosion of semiconductor and metal surfaces caused by HCI bombardments were studied by using a molecular dynamics simulation method, and the results were compared with experimental sputtering data.ru_RU
dc.identifier.citationInsepov, Z., Terasawa, M., & Takayama, K. (2008). Surface erosion and modification by highly charged ions. Physical Review A, 77(6), 062901.ru_RU
dc.identifier.urihttp://nur.nu.edu.kz/handle/123456789/2727
dc.language.isoenru_RU
dc.publisherPhysical Review Aru_RU
dc.rightsOpen Access - the content is available to the general publicru_RU
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjecthighly charged ion (HCI)ru_RU
dc.subjectsurface erosionru_RU
dc.titleSurface erosion and modification by highly charged ionsru_RU
dc.typeArticleru_RU

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