Computer simulation of decaborane implantation and rapid thermal annealing

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dc.contributor.authorInsepov, Z.
dc.contributor.authorAoki, T.
dc.contributor.authorMatsuo, J.
dc.contributor.authorYamada, I.
dc.date.accessioned2017-09-26T10:50:29Z
dc.date.available2017-09-26T10:50:29Z
dc.date.issued1999-12
dc.description.abstractMolecular Dynamics (MD) and Metropolis Monte- Carlo (MMC) models of monomer B and decaborane implantation into Si and following rapid thermal annealing (RTA) processes have been developed. The implanted B dopant and Si-atomic diffusion coefficients were obtained for different substrate temperatures. The simulation of decaborane ion implantation has revealed the formation of an amorphized area in a subsurface region, much larger than that of a single B+ implantation, with the same energy per ion. The calculated B diffusion coefficient has values between 10-'2-10-1c0m 2 s" which agrees well with experimental values obtained for an equilibrium B dopant in Si. Our calculations have shown an unusual temperature dependence with two different activation energies. Low activation energy, less than 0.2 eV, was obtained for a low temperature region, and a higher activation energy, - 3 eV, for a higher-temperature region which is typical for the RTA processing. The higher activation energy is comparable with the equilibrium activation energy, 3.4 eV, for B diffusion in Si. The diffusivity for Si atoms was obtained to be in the interval - l0l2 cm2 s-I. In our present simulation for decaborane cluster implantation into Si, we have not observed the TED phenomenon.ru_RU
dc.identifier.citationZinetulla Insepov, T Aoki, J Matsuo, I Yamada. 1999/12. Computer simulation of decaborane implantation and rapid thermal annealing. IEEE. Ion Implantation Technology Proceedings, 1998 International Conferenceru_RU
dc.identifier.urihttp://nur.nu.edu.kz/handle/123456789/2695
dc.language.isoenru_RU
dc.publisherIEEE. Ion Implantation Technology Proceedings, 1998 International Conferenceru_RU
dc.rightsOpen Access - the content is available to the general publicru_RU
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectMolecular Dynamics (MD)ru_RU
dc.subjectcomputer simulationru_RU
dc.subjectdecaborane implantationru_RU
dc.subjectrapid thermal annealing (RTA)ru_RU
dc.titleComputer simulation of decaborane implantation and rapid thermal annealingru_RU
dc.typeConference Paperru_RU

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