Intrinsic photoluminescence Stokes shift in semiconductors demonstrated by thin-film CdS formed with pulsed-laser deposition

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dc.contributor.authorUllrich, B.
dc.contributor.authorAriza-Flores, D.
dc.contributor.authorBhowmick, M.
dc.creatorB., Ullrich
dc.date.accessioned2017-12-20T08:18:32Z
dc.date.available2017-12-20T08:18:32Z
dc.date.issued2014-05-02
dc.description.abstractAbstract While not reported in the literature, by employing highly oriented, semi-insulating, thin-film CdS as test material, we present the observation of the intrinsic photoluminescence Stokes shift in a semiconductor. Analysis of Raman peaks, transmission, reflection, and photoluminescence shows that during band-to-band emission at room temperature one-to-two longitudinal optical phonons with energy of 39.8meV are emitted. The result is confirmed by the theoretically expected Huang–Rhys factor.en_US
dc.identifierDOI:10.1016/j.tsf.2014.02.047
dc.identifier.citationB. Ullrich, D. Ariza-Flores, M. Bhowmick, Intrinsic photoluminescence Stokes shift in semiconductors demonstrated by thin-film CdS formed with pulsed-laser deposition, In Thin Solid Films, Volume 558, 2014, Pages 24-26en_US
dc.identifier.issn00406090
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0040609014001825
dc.identifier.urihttp://nur.nu.edu.kz/handle/123456789/2960
dc.language.isoenen_US
dc.publisherThin Solid Filmsen_US
dc.relation.ispartofThin Solid Films
dc.rights.licenseCopyright © 2014 Elsevier B.V. All rights reserved.
dc.subjectStokes shiften_US
dc.subjectPulsed-laser depositionen_US
dc.subjectThin-film CdSen_US
dc.subjectHuang–Rhys factoren_US
dc.subjectBand gapen_US
dc.subjectRaman spectroscopyen_US
dc.subjectPhononsen_US
dc.titleIntrinsic photoluminescence Stokes shift in semiconductors demonstrated by thin-film CdS formed with pulsed-laser depositionen_US
dc.typeArticleen_US
elsevier.aggregationtypeJournal
elsevier.coverdate2014-05-02
elsevier.coverdisplaydate2 May 2014
elsevier.endingpage26
elsevier.identifier.doi10.1016/j.tsf.2014.02.047
elsevier.identifier.eid1-s2.0-S0040609014001825
elsevier.identifier.piiS0040-6090(14)00182-5
elsevier.identifier.scopusid84898788484
elsevier.openaccess0
elsevier.openaccessarticlefalse
elsevier.openarchivearticlefalse
elsevier.startingpage24
elsevier.teaserWhile not reported in the literature, by employing highly oriented, semi-insulating, thin-film CdS as test material, we present the observation of the intrinsic photoluminescence Stokes shift in a semiconductor....
elsevier.volume558
workflow.import.sourcescience

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