Intrinsic photoluminescence Stokes shift in semiconductors demonstrated by thin-film CdS formed with pulsed-laser deposition

Ullrich, B.; Ariza-Flores, D.; Bhowmick, M.; B., Ullrich

Intrinsic photoluminescence Stokes shift in semiconductors demonstrated by thin-film CdS formed with pulsed-laser deposition

Date

2014-05-02

Authors

Ullrich, B.

B., Ullrich

Ariza-Flores, D.

Bhowmick, M.

Publisher

Thin Solid Films

Abstract

Abstract While not reported in the literature, by employing highly oriented, semi-insulating, thin-film CdS as test material, we present the observation of the intrinsic photoluminescence Stokes shift in a semiconductor. Analysis of Raman peaks, transmission, reflection, and photoluminescence shows that during band-to-band emission at room temperature one-to-two longitudinal optical phonons with energy of 39.8meV are emitted. The result is confirmed by the theoretically expected Huang–Rhys factor.

Keywords

Stokes shift, Pulsed-laser deposition, Thin-film CdS, Huang–Rhys factor, Band gap, Raman spectroscopy, Phonons

Citation

B. Ullrich, D. Ariza-Flores, M. Bhowmick, Intrinsic photoluminescence Stokes shift in semiconductors demonstrated by thin-film CdS formed with pulsed-laser deposition, In Thin Solid Films, Volume 558, 2014, Pages 24-26