Low Power Near-sensor Coarse to Fine XOR based Memristive Edge Detection [Article]
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Date
2018-11-15
Authors
James, Alex Pappachen
Smagulova, Kamilya
Irmanova, Aidana
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers
Abstract
In this paper, we propose XOR based memristive edge detector circuit that is integrated into a near sensor log-linear CMOS pixel. Memristor threshold logic was used to design NAND gates, which serve as a building block for XOR gates. For validation of proposed circuit functionality hardware simulation of logic gates with a pixel pair was conducted using TSMC 0.18um technology and system-level simulation of the proposed circuit using SPICE models. The proposed method operates in low power and takes a small area on chip. The power consumption of one pixel is 1.16uW and total area 36.72 um 2 without photosensing component. The power consumption of NAND circuit is 1.11pW and total area 32.4um 2 .
Description
https://ieeexplore.ieee.org/document/8649972
Keywords
Low Power, Research Subject Categories::TECHNOLOGY, CMOS pixel, Memristive Edge Detection
Citation
Smagulova, K., Irmanova, A., & James, A. P. (2018). Low Power Near-sensor Coarse to Fine XOR based Memristive Edge Detection. In 2018 International SoC Design Conference (ISOCC). IEEE. https://doi.org/10.1109/isocc.2018.8649972