Аннотации:
Abstract In this study, we report on the preparation of n-type doped ∼ 400 nm thick amorphous Si thin film on a surface of 9µm rough current collector. The electrochemical cycling test of designed anodes revealed that Si thin film on the surface of rougn exhibited stable capacity retention (∼67µAhcm-2) for 120 cycles. Rate capability test showed the unaltered performance of prepared electrode after applying a current rates up to 300µAcm-2