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High-performance, heteroepitaxial, nanolaminate device layers on single-crystal-like, artificial substrates and controlled self-assembly of anostructures within device layers for wide-ranging electrical and electronic applications

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dc.contributor.author Goyal, Amit
dc.date.accessioned 2018-09-03T08:32:03Z
dc.date.available 2018-09-03T08:32:03Z
dc.date.issued 2018-08-08
dc.identifier.citation Goyal, Amit. (2018) High-performance, heteroepitaxial, nanolaminate device layers on single-crystal-like, artificial substrates and controlled self-assembly of anostructures within device layers for wide-ranging electrical and electronic applications. The 6th International Conference on Nanomaterials and Advanced Energy Storage Systems en_US
dc.identifier.uri http://nur.nu.edu.kz/handle/123456789/3417
dc.description.abstract For many energy and electronic applications, single-crystal-like materials offer the best performance. However, in almost all cases, fabrication of single-crystal form of the relevant material is too expensive. In addition, for many applications, very long or wide materials are required a regime not accessible by conventional single-crystal growth. en_US
dc.language.iso en en_US
dc.publisher The 6th International Conference on Nanomaterials and Advanced Energy Storage Systems en_US
dc.rights Attribution-NonCommercial-ShareAlike 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-sa/3.0/us/ *
dc.subject electronic applications en_US
dc.subject ferroelectrics en_US
dc.subject multiferroics en_US
dc.subject superconductors en_US
dc.title High-performance, heteroepitaxial, nanolaminate device layers on single-crystal-like, artificial substrates and controlled self-assembly of anostructures within device layers for wide-ranging electrical and electronic applications en_US
dc.type Abstract en_US
workflow.import.source science


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