Atomic layer deposition for TiO2 and TiN nanometer films

Ainabayev, Ardak; Bozheyev, Farabi; Zhuldassov, Abat; Lukasheva, Maria; Tynyshtykbaev, Kurbangali B.; Insepov, Z.

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dc.contributor.author	Ainabayev, Ardak
dc.contributor.author	Bozheyev, Farabi
dc.contributor.author	Zhuldassov, Abat
dc.contributor.author	Lukasheva, Maria
dc.contributor.author	Tynyshtykbaev, Kurbangali B.
dc.contributor.author	Insepov, Z.
dc.creator	Zeke, Insepov
dc.date.accessioned	2017-12-21T03:46:02Z
dc.date.available	2017-12-21T03:46:02Z
dc.date.issued	2017-01-01
dc.identifier	DOI:10.1016/j.matpr.2017.09.075
dc.identifier.citation	Zeke Insepov, Ardak Ainabayev, Farabi Bozheyev, Abat Zhuldassov, Maria Lukasheva, Kurbangali B. Tynyshtykbaev, Atomic layer deposition for TiO2 and TiN nanometer films, In Materials Today: Proceedings, Volume 4, Issue 11, Part 2, 2017, Pages 11630-11639	en_US
dc.identifier.issn	22147853
dc.identifier.uri	https://www.sciencedirect.com/science/article/pii/S2214785317318084
dc.identifier.uri	http://nur.nu.edu.kz/handle/123456789/2983
dc.description.abstract	Abstract In this work processes of atomic layer deposition (ALD) of TiO2 and TiN using ALD method and impact of thickness and composition of grown film on stoichiometry and morphology of deposited layer are investigated. It is shown, that with increasing ALD cycles the deposition of a thin metal layer on the back inactive side of the silicon substrate is observed and the roughness on the active surface of deposited metal layer is decreased.	en_US
dc.language.iso	en	en_US
dc.publisher	Materials Today: Proceedings	en_US
dc.relation.ispartof	Materials Today: Proceedings
dc.subject	Atomic layer deposition	en_US
dc.subject	Titanium nitride	en_US
dc.subject	Silicon layer	en_US
dc.subject	Roughness	en_US
dc.subject	Morphology	en_US
dc.subject	Surface	en_US
dc.title	Atomic layer deposition for TiO2 and TiN nanometer films	en_US
dc.type	Article	en_US
dc.rights.license	© 2017 Elsevier Ltd. All rights reserved.
elsevier.identifier.doi	10.1016/j.matpr.2017.09.075
elsevier.identifier.eid	1-s2.0-S2214785317318084
elsevier.identifier.pii	S2214-7853(17)31808-4
elsevier.identifier.scopusid	85032447177
elsevier.volume	4
elsevier.issue.identifier	11
elsevier.issue.name	7th International Conference on Advanced Nanomaterials (25 – 27th July 2016)
elsevier.coverdate	2017-01-01
elsevier.coverdisplaydate	2017
elsevier.startingpage	11630
elsevier.endingpage	11639
elsevier.openaccess	0
elsevier.openaccessarticle	false
elsevier.openarchivearticle	false
elsevier.teaser	In this work processes of atomic layer deposition (ALD) of TiO2 and TiN using ALD method and impact of thickness and composition of grown film on stoichiometry and morphology of deposited layer are...
elsevier.aggregationtype	Journal
workflow.import.source	science