Abstract:
Comprehensive knowledge of the optical properties, particularly of the room
temperature (RT) photoluminescence (PL), of ZnO is essential for the future employment of this wideband
gap (~3.3 eV at 300 K) II-VI compound semiconductor in photonic and optoelectronic device
structures [1]. Hence, vigorous research activities on ZnO thin films, epilayers, and crystals took place
during the last two decades, encompassing a vast variety of effects and phenomena such as birefringence,
photocurrent, PL including sub-band gap emission, reflectance, transmittance, excitonic properties,
Raman modes, and absorption edge steepness [1-4]. However, despite that large body of knowledge and
its essential importance for light emitting processes, a discussion of the ZnO PL lineshape is not found
in the literature [5].
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