Synthesis of WS2 crystals by the chemical vapor deposition (CVD) method on a SiO2 substrate

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dc.contributor.authorShaikenova, Altynay
dc.contributor.authorBeissenov, Renat
dc.contributor.authorMuratov, Dauren
dc.date.accessioned2018-09-07T03:37:35Z
dc.date.available2018-09-07T03:37:35Z
dc.date.issued2018-08-08
dc.description.abstractThe synthesis and characterization of WS2 single crystals grown by chemical vapor deposition (CVD) method thru sulfurization of tungsten oxide thin layer on quartz substrate was studied. Synthesis of WS2 was carried out at 800-1000 °C in CVD system. The sulphur vapor is transported by argon gas (500 sccm). Obtained WS2 single crystals characterized by optical microscope, Raman and photoluminescence analysis. Optical microscope analysis demonstrated that triangular WS2 domains with single phase crystal structure are formed. The thickness of WS2 is 6 layers, which determined by Raman spectroscopy. Photoluminescence spectroscopy is shown on Fig. 20, which revealed a strong peak between 600-660 nm, typically for a monolayer WS2 crystal, where the band gap is equal to 1.96 eV.en_US
dc.identifier.citationShaikenova, Altynay; Beissenov, Renat; Muratov, Dauren. (2018) Synthesis of WS2 crystals by the chemical vapor deposition (CVD) method on a SiO2 substrate. The 6th International Conference on Nanomaterials and Advanced Energy Storage Systems. Institute of Batteries LLP, Nazarbayev University, and PI “National Laboratory Astana”. p72.en_US
dc.identifier.urihttp://nur.nu.edu.kz/handle/123456789/3505
dc.language.isoenen_US
dc.publisherThe 6th International Conference on Nanomaterials and Advanced Energy Storage Systems. Institute of Batteries LLP, Nazarbayev University, and PI “National Laboratory Astana”.en_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectchemical vapor deposition (CVD)en_US
dc.titleSynthesis of WS2 crystals by the chemical vapor deposition (CVD) method on a SiO2 substrateen_US
dc.typeAbstracten_US
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