High-performance, heteroepitaxial, nanolaminate device layers on single-crystal-like, artificial substrates and controlled self-assembly of anostructures within device layers for wide-ranging electrical and electronic applications

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dc.contributor.authorGoyal, Amit
dc.date.accessioned2018-09-03T08:32:03Z
dc.date.available2018-09-03T08:32:03Z
dc.date.issued2018-08-08
dc.description.abstractFor many energy and electronic applications, single-crystal-like materials offer the best performance. However, in almost all cases, fabrication of single-crystal form of the relevant material is too expensive. In addition, for many applications, very long or wide materials are required a regime not accessible by conventional single-crystal growth.en_US
dc.identifier.citationGoyal, Amit. (2018) High-performance, heteroepitaxial, nanolaminate device layers on single-crystal-like, artificial substrates and controlled self-assembly of anostructures within device layers for wide-ranging electrical and electronic applications. The 6th International Conference on Nanomaterials and Advanced Energy Storage Systemsen_US
dc.identifier.urihttp://nur.nu.edu.kz/handle/123456789/3417
dc.language.isoenen_US
dc.publisherThe 6th International Conference on Nanomaterials and Advanced Energy Storage Systemsen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectelectronic applicationsen_US
dc.subjectferroelectricsen_US
dc.subjectmultiferroicsen_US
dc.subjectsuperconductorsen_US
dc.titleHigh-performance, heteroepitaxial, nanolaminate device layers on single-crystal-like, artificial substrates and controlled self-assembly of anostructures within device layers for wide-ranging electrical and electronic applicationsen_US
dc.typeAbstracten_US
workflow.import.sourcescience

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