STRUCTURE AND ELECTRONIC PROPERTIES OF LAYERED GE-SB-TE BASED ALLOYS

Simple item page
dc.contributor.authorTolepov, Zhandos
dc.contributor.authorPrikhod’ko, Oleg
dc.contributor.authorZhakupov, Alibek
dc.contributor.authorTursyn, Yernar
dc.contributor.authorRakhi, Assyltas
dc.date.accessioned2022-09-14T06:07:20Z
dc.date.available2022-09-14T06:07:20Z
dc.date.issued2022-08
dc.description.abstractCurrently, with the increasing demands for modern storage media, such as flash memory (flash-memory) and hard disks based on magnetic recording, there is a failure of these types of storage media. This is mainly due to the insufficient number of write and erase cycles, the speed of writing and reading information, low radiation resistance, etc. [1-3]. In this regard, the expected receiver of a new generation of information carriers are non-volatile phase memory elements (PCM - Phase Change Memory) based on chalcogenide glassy semiconductors (CGS)en_US
dc.identifier.citationTolepov, Zh. Prikhod’ko, O. Zhakupov, A. Tursyn, Ye. Rakhi, A. (2022). Structure and electronic properties of layered Ge-Sb-Te based alloys. National Laboratory Astanaen_US
dc.identifier.urihttp://nur.nu.edu.kz/handle/123456789/6673
dc.language.isoenen_US
dc.publisherNational Laboratory Astanaen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectType of access: Embargoen_US
dc.subjectPhase Change Memoryen_US
dc.titleSTRUCTURE AND ELECTRONIC PROPERTIES OF LAYERED GE-SB-TE BASED ALLOYSen_US
dc.typeAbstracten_US
workflow.import.sourcescience

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Structure and electronic properties of layered Ge-Sb-Te based alloys.pdf
Size:
143.26 KB
Format:
Adobe Portable Document Format
Description:
abstract
Download
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
6.28 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

Abstracts