Inherent photoluminescence Stokes shift in GaAs

Simple item page
dc.contributor.authorUllrich, Bruno
dc.contributor.authorSingh, Akhilesh K.
dc.contributor.authorBarik, Puspendu
dc.contributor.authorXi, Haowen
dc.contributor.authorBhowmick, Mithun
dc.date.accessioned2017-11-13T03:48:28Z
dc.date.available2017-11-13T03:48:28Z
dc.date.issued2015-06-01
dc.description.abstractThe intrinsic photoluminescence Stokes shift, i.e., the energy difference between optical band gap and emission peak, of 350 μm thick semi-insulating GaAs wafers is found to be 4 meV at room temperature. The result is based on the determination of the optical bulk band gap from the transmission trend via modified Urbach rule whose result is confirmed with the transmission derivative method. The findings reveal the detailed balance of the optically evoked transitions and disclose the intrinsic link between Stokes shift and the Urbach tail slope parameter.ru_RU
dc.identifier.citationUllrich Bruno et al.(>4), 2015(June 1), Inherent photoluminescence Stokes shift in GaAs, Optics letters,Vol. 40, No. 11ru_RU
dc.identifier.urihttp://dx.doi.org/10.1364/OL.40.002580
dc.identifier.urihttp://nur.nu.edu.kz/handle/123456789/2779
dc.language.isoenru_RU
dc.publisherOptics lettersru_RU
dc.rightsOpen Access - the content is available to the general publicru_RU
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectStokes shiftru_RU
dc.subjectphotoluminescenceru_RU
dc.subjectUrbach ruleru_RU
dc.subjectUrbach tail slope parameterru_RU
dc.titleInherent photoluminescence Stokes shift in GaAsru_RU
dc.typeArticleru_RU

Files

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
Inherent+.pdf
Size:
281.01 KB
Format:
Adobe Portable Document Format
Description:
Download

Collections

Articles