Spin-dependent transport properties of Fe3O4/MoS2/Fe3O4 junctions
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Date
2015-11-02
Authors
Wu, Han-Chun
Ó Coileáin, Cormac
Abid, Mourad
Mauit, Ozhet
Syrlybekov, Askar
Khalid, Abbas
Xu, Hongjun
Gatensby, Riley
Wang, Jing Jing
Liu, Huajun
Journal Title
Journal ISSN
Volume Title
Publisher
Scientific Reports
Abstract
Magnetite is a half-metal with a high Curie temperature of 858 K, making it a promising candidate for magnetic tunnel junctions (MTJs). Yet, initial efforts to exploit its half metallic nature in Fe3O4/ MgO/Fe3O4 MTJ structures have been far from promising. Finding suitable barrier layer materials, which keep the half metallic nature of Fe3O4 at the interface between Fe3O4 layers and barrier layer, is one of main challenges in this field. Two-dimensional (2D) materials may be good candidates for this purpose. Molybdenum disulfide (MoS2) is a transition metal dichalcogenide (TMD) semiconductor
with distinctive electronic, optical, and catalytic properties. Here, we show based on the first principle calculations that Fe3O4 keeps a nearly fully spin polarized electron band at the interface between MoS2 and Fe3O4. We also present the first attempt to fabricate the Fe3O4/MoS2/Fe3O4 MTJs. A clear tunneling magnetoresistance (TMR) signal was observed below 200 K. Thus, our experimental and theoretical studies indicate that MoS2 can be a good barrier material for Fe3O4 based MTJs.Our calculations also indicate that junctions incorporating monolayer or bilayer MoS2 are metallic.
Description
Keywords
magnetite, magnetic tunnel junctions (MTJs), Molybdenum disulfide, MoS2, tunneling magnetoresistance (TMR)
Citation
Wu Han-Chun et al.(>14), 2015(November 2), Spin-dependent transport properties of Fe3O4/MoS2/Fe3O4 junctions, Scientific Reports