LARGE-SIGNAL MODELING OF GAN HEMTS USING HYBRID GA-ANN, PSO-SVR, AND GPR-BASED APPROACHES

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Date

2020-11-03

Authors

Jarndal, Anwar
Husain, Saddam
Hashmi, Mohammad S.
Ghannouchi, Fadhel M.

Journal Title

Journal ISSN

Volume Title

Publisher

IEEE Journal of the Electron Devices Society

Abstract

This article presents an extensive study and demonstration of efficient electrothermal largesignal GaN HEMT modeling approaches based on combined techniques of Genetic Algorithm (GA) with Artificial Neural Networks (ANN), and Particle Swarm optimization (PSO) with Support Vector Regression (SVR). Another promising Gaussian Process Regression (GPR) based large-signal modeling approach is also explored and presented. The GA-ANN addresses the typical problem of local minima associated with the backpropagation (BP) based ANN. The GA successfully aids in the determination of optimal initial values for BP-ANN and enables it to find a unique optimal solution after subsequent of iterations with higher rate of convergence. This is also achieved using PSO-SVR with lower optimization variables. The developed modeling techniques are demonstrated and used to simulate the gate and drain currents of a 2-mm GaN device. All the models are relatively simple, practical, and easy to implement. The gate and drain currents models are embedded in an equivalent large-signal circuit’s model and built in Advanced Design System (ADS) software.

Description

Keywords

ANN modeling, GaN HEMT, GPR modeling, large-signal modeling, SVR modeling

Citation

Saddam Husain, Ahmad Khusro, Mohammad Hashmi, Galymzhan Nauryzbayev, Muhammad Akmal Chaudhary, "Demonstration of CAD Deployability for GPR Based Small-Signal Modelling of GaN HEMT", 2021 IEEE International Symposium on Circuits and Systems (ISCAS), pp. 1-5, 2021.

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