Conformal High-K Dielectric Coating of Suspended Single-Walled Carbon Nanotubes by Atomic Layer Deposition

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dc.contributor.authorKemelbay, Aidar
dc.contributor.authorTikhonov, Alexander
dc.contributor.authorAloni, Shaul
dc.contributor.authorKuykendall, Tevye R.
dc.date.accessioned2019-12-12T08:17:55Z
dc.date.available2019-12-12T08:17:55Z
dc.date.issued2019-08
dc.descriptionhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC6723932/en_US
dc.description.abstractAs one of the highest mobility semiconductor materials, carbon nanotubes (CNTs) have been extensively studied for use in field effect transistors (FETs). To fabricate surround-gate FETs— which offer the best switching performance—deposition of conformal, weakly-interacting dielectric layers is necessary. This is challenging due to the chemically inert surface of CNTs and a lack of nucleation sites—especially for defect-free CNTs. As a result, a technique that enables integration of uniform high-k dielectrics, while preserving the CNT’s exceptional properties is required. In this work, we show a method that enables conformal atomic layer deposition (ALD) of high-k dielectrics on defect-free CNTs. By depositing a thin Ti metal film, followed by oxidation to TiO2 under ambient conditions, a nucleation layer is formed for subsequent ALD deposition of Al2O3. The technique is easy to implement and is VLSI-compatible. We show that the ALD coatings are uniform, continuous and conformal, and Raman spectroscopy reveals that the technique does not induce defects in the CNT. The resulting bilayer TiO2/Al2O3 thin-film shows an improved dielectric constant of 21.7 and an equivalent oxide thickness of 2.7 nm. The electrical properties of back-gated and top-gated devices fabricated using this method are presented.en_US
dc.identifier.citationKemelbay, Tikhonov, Aloni, & Kuykendall. (2019). Conformal High-K Dielectric Coating of Suspended Single-Walled Carbon Nanotubes by Atomic Layer Deposition. Nanomaterials, 9(8), 1085. https://doi.org/10.3390/nano9081085en_US
dc.identifier.other10.3390/nano9081085
dc.identifier.urihttp://nur.nu.edu.kz/handle/123456789/4436
dc.language.isoenen_US
dc.publisherMDPIen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectcarbon nanotubeen_US
dc.subjectatomic layer depositionen_US
dc.subjectdielectricen_US
dc.subjectTiO2en_US
dc.subjectnucleation layeren_US
dc.titleConformal High-K Dielectric Coating of Suspended Single-Walled Carbon Nanotubes by Atomic Layer Depositionen_US
dc.typeArticleen_US
workflow.import.sourcescience

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