Simulation of ion implantation into nuclear materials and comparison with experiment

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dc.contributor.authorInsepov, Z.
dc.contributor.authorYun, D.
dc.contributor.authorYe, B.
dc.contributor.authorRest, J.
dc.contributor.authorStarikov, S.
dc.contributor.authorYacout, A. M.
dc.date.accessioned2017-09-27T04:24:35Z
dc.date.available2017-09-27T04:24:35Z
dc.date.issued2011-06
dc.description.abstractRadiation defects generated in Mo formed by sub-MeV Xe ion implantations were studied by atomistic molecular dynamics based on interatomic potential matched to density functional calculations. The results of the simulations were qualitatively compared with defect distributions in CeO2 and CeLaO2 crystals used as surrogate materials for UO2 obtained from experiments by implantation of these ions at a dose of 1×1017 ions/cm2 at several temperatures. A combination of in situ Transmission Electron Microscopy (TEM) and ex situ TEM experiments was used to study the evolution of defect clusters during implantation of Xe and Kr ions at energies of 150-700 keV, depending on the experimental conditions. The simulation and irradiation were performed on thin-film, single-crystal materials. The formation of defects, dislocation loops, and precipitates was studied by simulation and compared to experiment. Various sets of quantitative experimental results were obtained to characterize the dose and temperature effects of irradiation. These experimental results include size distributions of dislocation loops, voids, and gas bubble structures created by irradiation.ru_RU
dc.identifier.citationInsepov, Z., Yun, D., Ye, B., Rest, J., Starikov, S., & Yacout, A. M. (2011, June). Simulation of ion implantation into nuclear materials and comparison with experiment. In AIP Conference Proceedings (Vol. 1336, No. 1, pp. 672-676). AIP.ru_RU
dc.identifier.uriDOI: 10.1063/1.3586187
dc.identifier.urihttp://nur.nu.edu.kz/handle/123456789/2710
dc.language.isoenru_RU
dc.publisherAmerican Institute of Physicsru_RU
dc.rightsOpen Access - the content is available to the general publicru_RU
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectradiation defectsru_RU
dc.subjectMoru_RU
dc.subjectCeO2ru_RU
dc.subjectTEMru_RU
dc.subjectXe and Kr ionsru_RU
dc.subjectMD and MC simulationsru_RU
dc.titleSimulation of ion implantation into nuclear materials and comparison with experimentru_RU
dc.typeConference Paperru_RU

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