2D BI2SE3 VAN DER WAALS EPITAXY ON MICA FOR OPTOELECTRONICS APPLICATIONS
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Date
2020-08-22
Authors
Wang, Shifeng
Li, Yong
Ng, Annie
Hu, Qing
Zhou, Qianyu
Li, Xin
Liu, Hao
Journal Title
Journal ISSN
Volume Title
Publisher
MDPI
Abstract
Bi2Se3 possesses a two-dimensional layered rhombohedral crystal structure, where the
quintuple layers (QLs) are covalently bonded within the layers but weakly held together by van
der Waals forces between the adjacent QLs. It is also pointed out that Bi2Se3 is a topological
insulator, making it a promising candidate for a wide range of electronic and optoelectronic
applications. In this study, we investigate the growth of high-quality Bi2Se3 thin films on mica
by the molecular beam epitaxy technique. The films exhibited a layered structure and highly
c-axis-preferred growth orientation with an XRD rocking curve full-width at half-maximum (FWHM)
of 0.088◦
, clearly demonstrating excellent crystallinity for the Bi2Se3 deposited on the mica substrate.
The growth mechanism was studied by using an interface model associated with the coincidence site
lattice unit (CSLU) developed for van der Waals epitaxies. This high (001) texture favors electron
transport in the material. Hall measurements revealed a mobility of 726 cm2
/(Vs) at room temperature
and up to 1469 cm2
/(Vs) at 12 K. The results illustrate excellent electron mobility arising from
the superior crystallinity of the films with significant implications for applications in conducting
electrodes in optoelectronic devices on flexible substrates.
Description
Keywords
van der Waals epitaxy, Bi2Se3, mica, two-dimensional materials, optoelectronics, transparent conductive electrode, Type of access: Open Access
Citation
Wang, S., Li, Y., Ng, A., Hu, Q., Zhou, Q., Li, X., & Liu, H. (2020). 2D Bi2Se3 van der Waals Epitaxy on Mica for Optoelectronics Applications. Nanomaterials, 10(9), 1653. https://doi.org/10.3390/nano10091653