Crystallographic Characterisation of Ultra-Thin, or Amorphous Transparent Conducting Oxides—The Case for Raman Spectroscopy

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Date

2020-01-07

Authors

Ainabayev, Ardak
Sugurbekova, Gulnar
Caffrey, David
Zhussupbekova, Ainur
Vijayaraghavan, Rajani K.
Kaisha, Aitkazy
Shvets, Igor V.
Fleischer, Karsten

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Publisher

MDPI

Abstract

The electronic and optical properties of transparent conducting oxides (TCOs) are closely linked to their crystallographic structure on a macroscopic (grain sizes) and microscopic (bond structure) level. With the increasing drive towards using reduced film thicknesses in devices and growing interest in amorphous TCOs such as n-type InGaZnO 4 (IGZO), ZnSnO 3 (ZTO), p-type Cu x CrO 2 , or ZnRh 2 O 4 , the task of gaining in-depth knowledge on their crystal structure by conventional X-ray diffraction-based measurements are becoming increasingly difficult. We demonstrate the use of a focal shift based background subtraction technique for Raman spectroscopy specifically developed for the case of transparent thin films on amorphous substrates. Using this technique we demonstrate, for a variety of TCOs CuO, a-ZTO, ZnO:Al), how changes in local vibrational modes reflect changes in the composition of the TCO and consequently their electronic properties.

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Keywords

Research Subject Categories::NATURAL SCIENCES::Physics

Citation

Caffrey, D., Zhussupbekova, A., Vijayaraghavan, R. K., Ainabayev, A., Kaisha, A., Sugurbekova, G., ... & Fleischer, K. (2020). Crystallographic Characterisation of Ultra-Thin, or Amorphous Transparent Conducting Oxides—The Case for Raman Spectroscopy. Materials, 13(2), 267.