Silicon solar cells textured using gold of induced etching
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Date
2020-08
Authors
Dikhanbayev, K.K.
Shabdan, Ye.
Sagidolda, Ye.
Bayganatova, Sh. B.
Mussabek, G. K.
Zhumatova, Sh.A.
Journal Title
Journal ISSN
Volume Title
Publisher
The 8th International Conference on Nanomaterials and Advanced Energy Storage Systems; Nazarbayev University; National Laboratory Astana; Institute of Batteries
Abstract
As is known, a layer with a dielectric coating remains the standard of a photoelectric converter and many research groups are studying various alternative methods to achieve an antireflection effect in silicon for photovoltaic and other optoelectronic applications [1]. Some of these methods include electrochemical etching [2], sol-gel deposition [3], magnetron sputtering of metal oxide films [4], and anisotropic etching [5].
Ready-made structures with a p-n junction were used as the initial substrate, the specific resistivity of the n+ layer was 0.008-0.01 Ohm∙cm and the total plate thickness was 300 μm. Then, the front side of the sample is chemically activated in a solution of 0.4 mM, HAuCl4 for 3-5 s, after which it is thoroughly washed in deionized water.
The output parameters of solar cells were determined from the characteristics. In particular, open circuit voltage Uoc = 610 mV, short-circuit current Isc = 32 mA / cm2, duty cycle ξ = 0.77, light emission power Pmax = 100 mWt /cm2, efficiency is ~ 15.03%.
Description
Keywords
silicon solar cells, gold, antireflection effect, Research Subject Categories::TECHNOLOGY