Studies of electrical and crystal properties of ALD grown ZnO

Mauit, Ozhet; Ainabayev, Ardak; Toktarbaiuly, Olzat; Sugurbekova, Gulnar

Studies of electrical and crystal properties of ALD grown ZnO

dc.contributor.author	Mauit, Ozhet
dc.contributor.author	Ainabayev, Ardak
dc.contributor.author	Toktarbaiuly, Olzat
dc.contributor.author	Sugurbekova, Gulnar
dc.date.accessioned	2018-09-04T10:13:23Z
dc.date.available	2018-09-04T10:13:23Z
dc.date.issued	2018-08-08
dc.description.abstract	Aluminium doped ZnO (AZO) is an interesting low cost transparent conducting oxide with further use as inorganic transport layer in multilayer solar cells as well as sensors. Here we present our work on atomic layer deposited (ALD) thin films where with optimized growth conditions we can maintain resistivity below 10-3 Ωcm even in 50-65 nm thin films grown at low temperatures (530 K) We discuss the influence of crystallographic texture for ALD grown films by comparing plain glass, Al2O3 c-plane, and Al2O3 a-plane substrates.	en_US
dc.identifier.citation	Mauit, Ozhet, Ainabayev, Ardak, Toktarbaiuly, Olzat, Sugurbekova, Gulnar. (2018) Studies of electrical and crystal properties of ALD grown ZnO. The 6th International Conference on Nanomaterials and Advanced Energy Storage Systems. Institute of Batteries LLP, Nazarbayev University, and PI “National Laboratory Astana”. p42.	en_US
dc.identifier.uri	http://nur.nu.edu.kz/handle/123456789/3459
dc.language.iso	en	en_US
dc.publisher	The 6th International Conference on Nanomaterials and Advanced Energy Storage Systems. Institute of Batteries LLP, Nazarbayev University, and PI “National Laboratory Astana”.	en_US
dc.rights	Attribution-NonCommercial-ShareAlike 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-sa/3.0/us/	*
dc.subject	Aluminium	en_US
dc.subject	atomic layer deposited (ALD)	en_US
dc.title	Studies of electrical and crystal properties of ALD grown ZnO	en_US
dc.type	Abstract	en_US
workflow.import.source	science