Studies of electrical and crystal properties of ALD grown ZnO

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dc.contributor.authorMauit, Ozhet
dc.contributor.authorAinabayev, Ardak
dc.contributor.authorToktarbaiuly, Olzat
dc.contributor.authorSugurbekova, Gulnar
dc.date.accessioned2018-09-04T10:13:23Z
dc.date.available2018-09-04T10:13:23Z
dc.date.issued2018-08-08
dc.description.abstractAluminium doped ZnO (AZO) is an interesting low cost transparent conducting oxide with further use as inorganic transport layer in multilayer solar cells as well as sensors. Here we present our work on atomic layer deposited (ALD) thin films where with optimized growth conditions we can maintain resistivity below 10-3 Ωcm even in 50-65 nm thin films grown at low temperatures (530 K) We discuss the influence of crystallographic texture for ALD grown films by comparing plain glass, Al2O3 c-plane, and Al2O3 a-plane substrates.en_US
dc.identifier.citationMauit, Ozhet, Ainabayev, Ardak, Toktarbaiuly, Olzat, Sugurbekova, Gulnar. (2018) Studies of electrical and crystal properties of ALD grown ZnO. The 6th International Conference on Nanomaterials and Advanced Energy Storage Systems. Institute of Batteries LLP, Nazarbayev University, and PI “National Laboratory Astana”. p42.en_US
dc.identifier.urihttp://nur.nu.edu.kz/handle/123456789/3459
dc.language.isoenen_US
dc.publisherThe 6th International Conference on Nanomaterials and Advanced Energy Storage Systems. Institute of Batteries LLP, Nazarbayev University, and PI “National Laboratory Astana”.en_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectAluminiumen_US
dc.subjectatomic layer deposited (ALD)en_US
dc.titleStudies of electrical and crystal properties of ALD grown ZnOen_US
dc.typeAbstracten_US
workflow.import.sourcescience

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