Low temperature synthesis of graphene nanocomposites using surface passivation of porous silicon nanocrystallites with carbon atoms

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dc.contributor.authorTynyshtykbayev, Kurbangali B.
dc.contributor.authorAinabаyev, Ardak
dc.contributor.authorKononenko, O.
dc.contributor.authorChichkov
dc.contributor.authorInsepov, Z.
dc.creatorTynyshtykbayev, Kurbangali B.
dc.date.accessioned2019-01-31T10:04:17Z
dc.date.available2019-01-31T10:04:17Z
dc.date.issued2019-02-28
dc.description.abstractAbstract This work presents the experimental investigation of the synthesis of graphene carbon nanocomposites (CNC-G) by carbonization of porous silicon (PS) using CVD method at low temperature of T = 350–500 °C. The low-temperature synthesis of CNC-G is explained by a low melting temperature of porous silicon nanocrystallites (nc-PS) formed during electrochemical etching.en_US
dc.identifierDOI:10.1016/j.diamond.2018.12.012
dc.identifier.issn09259635
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0925963518305569
dc.identifier.urihttp://nur.nu.edu.kz/handle/123456789/3715
dc.language.isoenen_US
dc.relation.ispartofDiamond and Related Materials
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.license© 2018 Elsevier B.V. All rights reserved.
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.titleLow temperature synthesis of graphene nanocomposites using surface passivation of porous silicon nanocrystallites with carbon atomsen_US
dc.typeArticleen_US
elsevier.aggregationtypeJournal
elsevier.coverdate2019-02-28
elsevier.coverdisplaydateFebruary 2019
elsevier.endingpage60
elsevier.identifier.doi10.1016/j.diamond.2018.12.012
elsevier.identifier.eid1-s2.0-S0925963518305569
elsevier.identifier.piiS0925-9635(18)30556-9
elsevier.openaccess0
elsevier.openaccessarticlefalse
elsevier.openarchivearticlefalse
elsevier.startingpage53
elsevier.teaserThis work presents the experimental investigation of the synthesis of graphene carbon nanocomposites (CNC-G) by carbonization of porous silicon (PS) using CVD method at low temperature of T = 350–500 °C....
elsevier.volume92
workflow.import.sourcescience

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