First-principles time-dependent simulation of laser assisted desorption of hydrogen atoms from H–Si (111) surface

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dc.contributor.authorBubin, Sergiy
dc.contributor.authorVarga, Kálmán
dc.contributor.institutionSchool of Sciences and Humanities
dc.date.accessioned2016-01-27T04:41:52Z
dc.date.available2016-01-27T04:41:52Z
dc.date.issued2011
dc.description.abstractThe dynamics of hydrogen desorption from H-terminated silicon surface clusters has been simulated in the framework of real space time-dependent density functional theory complemented with molecular dynamics for ions. It has been demonstrated that by choosing an appropriate frequency and intensity of the laser it is possible to remove the hydrogen layer from the surface without destroying the structure of underlying silicon. At the laser field intensities used in the current study 0.5–2.0 V/Å the desorption process is notably nonlinear
dc.identifier.citationBubin, S., & Varga, K. (2011). First-principles time-dependent simulation of laser assisted desorption of hydrogen atoms from H–Si (111) surface. Applied Physics Letters, 98(15).
dc.identifier.doihttps://doi.org/10.1063/1.3580563
dc.identifier.urihttp://nur.nu.edu.kz/handle/123456789/1044
dc.language.isoen
dc.publisherAIP Publishing
dc.rightsMetadata only
dc.sourceApplied Physics Letters, 98(15).
dc.subjectphysics
dc.subjecthydrogen desorption
dc.titleFirst-principles time-dependent simulation of laser assisted desorption of hydrogen atoms from H–Si (111) surface
dc.typeArticle

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