Effects of Memristors on Fully Differential Transimpedance Amplifier Performance

Abstract

The Internet of Things (IoT) requires low‑power and compact circuit architectures. This paper proposes a CMOS‑memristive fully differential transimpedance amplifier (TIA), replacing a resistor and two CMOS transistors with memristors in 180 nm CMOS technology. Simulations under a 1 pF load show bandwidths of 5.3–23 MHz and transimpedance gains of 2.3–5.7 kΩ. The new design is compared to conventional architecture in terms of gain, frequency response, linear range, power consumption, area, total harmonic distortion, and temperature variation performance.