GaN nanostructures for use in microelectronics

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dc.contributor.authorBolat, R.
dc.contributor.authorAlimzhanov, D.
dc.contributor.authorSugurbekova, G.
dc.date.accessioned2015-10-30T10:07:19Z
dc.date.available2015-10-30T10:07:19Z
dc.date.issued2013
dc.description.abstractWe have demonstrated possibility of replacing toxic and pyrophoric NH3, HCl by safer NH4Cl in the process of GaN synthesis. The method is flexible enough to produce thin films or bulk microrods. Good quality thin films were obtained at relatively low temperatures with high growth rate.ru_RU
dc.identifier.urihttp://nur.nu.edu.kz/handle/123456789/636
dc.language.isoenru_RU
dc.publisherNazarbayev Universityru_RU
dc.subjectfirst research weekru_RU
dc.subjectmicroelectronicsru_RU
dc.subjectGaNru_RU
dc.titleGaN nanostructures for use in microelectronicsru_RU
dc.typeAbstractru_RU

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