In situ doping of silicon carbide semiconductor via epitaxy
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Date
2018-08-08
Authors
Myronov, Maksym
Journal Title
Journal ISSN
Volume Title
Publisher
The 6th International Conference on Nanomaterials and Advanced Energy Storage Systems
Abstract
Silicon carbide (SiC) is a wide bandgap semiconductor which can operate at high temperatures and resist chemicals and radiation, making it ideal for applications in a range of harsh environments [1]. Among over 200 polytypes of SiC, only cubic silicon carbide (3C-SiC) can be heteroepitaxially grown on Si. However, there are still no commercial 3C-SiC devices available due to its cost and issues with growth and leakage currents [2]. While leakage into the underlying Si can be managed by transferring the 3C-SiC layer to an insulating substrate, this process is difficult to scale and integrate into current technologies [3].
Description
Keywords
Silicon carbide (SiC), phosphorus (P), silicon-on-insulator (SOI)
Citation
Myronov, Maksym. (2018) In situ doping of silicon carbide semiconductor via epitaxy. The 6th International Conference on Nanomaterials and Advanced Energy Storage Systems. p17.