In situ doping of silicon carbide semiconductor via epitaxy

Abstract

Silicon carbide (SiC) is a wide bandgap semiconductor which can operate at high temperatures and resist chemicals and radiation, making it ideal for applications in a range of harsh environments [1]. Among over 200 polytypes of SiC, only cubic silicon carbide (3C-SiC) can be heteroepitaxially grown on Si. However, there are still no commercial 3C-SiC devices available due to its cost and issues with growth and leakage currents [2]. While leakage into the underlying Si can be managed by transferring the 3C-SiC layer to an insulating substrate, this process is difficult to scale and integrate into current technologies [3].