Atomic layer deposition for TiO2 and TiN nanometer films

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dc.contributor.authorAinabayev, Ardak
dc.contributor.authorBozheyev, Farabi
dc.contributor.authorZhuldassov, Abat
dc.contributor.authorLukasheva, Maria
dc.contributor.authorTynyshtykbaev, Kurbangali B.
dc.contributor.authorInsepov, Z.
dc.creatorZeke, Insepov
dc.date.accessioned2017-12-21T03:46:02Z
dc.date.available2017-12-21T03:46:02Z
dc.date.issued2017-01-01
dc.description.abstractAbstract In this work processes of atomic layer deposition (ALD) of TiO2 and TiN using ALD method and impact of thickness and composition of grown film on stoichiometry and morphology of deposited layer are investigated. It is shown, that with increasing ALD cycles the deposition of a thin metal layer on the back inactive side of the silicon substrate is observed and the roughness on the active surface of deposited metal layer is decreased.en_US
dc.identifierDOI:10.1016/j.matpr.2017.09.075
dc.identifier.citationZeke Insepov, Ardak Ainabayev, Farabi Bozheyev, Abat Zhuldassov, Maria Lukasheva, Kurbangali B. Tynyshtykbaev, Atomic layer deposition for TiO2 and TiN nanometer films, In Materials Today: Proceedings, Volume 4, Issue 11, Part 2, 2017, Pages 11630-11639en_US
dc.identifier.issn22147853
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S2214785317318084
dc.identifier.urihttp://nur.nu.edu.kz/handle/123456789/2983
dc.language.isoenen_US
dc.publisherMaterials Today: Proceedingsen_US
dc.relation.ispartofMaterials Today: Proceedings
dc.rights.license© 2017 Elsevier Ltd. All rights reserved.
dc.subjectAtomic layer depositionen_US
dc.subjectTitanium nitrideen_US
dc.subjectSilicon layeren_US
dc.subjectRoughnessen_US
dc.subjectMorphologyen_US
dc.subjectSurfaceen_US
dc.titleAtomic layer deposition for TiO2 and TiN nanometer filmsen_US
dc.typeArticleen_US
elsevier.aggregationtypeJournal
elsevier.coverdate2017-01-01
elsevier.coverdisplaydate2017
elsevier.endingpage11639
elsevier.identifier.doi10.1016/j.matpr.2017.09.075
elsevier.identifier.eid1-s2.0-S2214785317318084
elsevier.identifier.piiS2214-7853(17)31808-4
elsevier.identifier.scopusid85032447177
elsevier.issue.identifier11
elsevier.issue.name7th International Conference on Advanced Nanomaterials (25 – 27th July 2016)
elsevier.openaccess0
elsevier.openaccessarticlefalse
elsevier.openarchivearticlefalse
elsevier.startingpage11630
elsevier.teaserIn this work processes of atomic layer deposition (ALD) of TiO2 and TiN using ALD method and impact of thickness and composition of grown film on stoichiometry and morphology of deposited layer are...
elsevier.volume4
workflow.import.sourcescience

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