Intrinsic photoluminescence stokes shift in thin-film cadmium sulfide

Abstract

Exciting a semiconductor through light absorption produces photoluminescence (PL). In general, the emitted energy is lower than the energy absorbed. The phenomenon, first discovered in the nineteenth century, is known as Stokes shift energy [1]. The change in energy (AS t o k e s), crucial for the information about the phonon relaxation in the material and with importance in light emitting devices, has not been investigated experimentally very systematically [2]. In this project, we present the observation of the intrinsic photoluminescence Stokes shift in a semiconductor.