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Size effects in near-ultraviolet Raman spectra of few-nanometer-thick silicon-oninsulator nanofilms

Poborchii, Vladimir; Morita, Yukinori; Tada, Tetsuya; Geshev, Pavel I.; Utegulov, Zhandos; Volkov, Alexey (Journal of Applied Physics, 2016-04)

We have fabricated Si-on-insulator (SOI) layers with a thickness h1 of a few nanometers and examined them by Raman spectroscopy with 363.8 nm excitation. We have found that phonon and electron confinement play important ...