Browsing School of Engineering and Digital Sciences by Subject "GaN HEMT"

Now showing items 1-3 of 3

A GENERIC AND EFFICIENT GLOBALIZED KERNEL MAPPING-BASED SMALL-SIGNAL BEHAVIORAL MODELING FOR GAN HEMT

Khusro, Ahmad; Husain, Saddam; Hashmi, Mohammad S.; Ansari, Abdul Quaiyum; Arzykulov, Sultangali (Institute of Electrical and Electronics Engineers, 2020-10-20)

The work reported in this article explores a novel Particle Swarm Optimization (PSO) tuned Support Vector Regression (SVR) based technique to develop the small-signal behavioral model for GaN High Electron Mobility ...
I-V MODELS WITH THE TEMPERATURE DEPENDENCE OF GAN HEMT UTILIZING FEEDFORWARD NEURAL NETWORKS, RADIAL BASIS NEURAL NETWORKS, AND GENERALIZED REGRESSION NEURAL NETWORKS

Kassymbek, Moldir (School of Engineering and Digital Sciences, 2023)

This work contains aim to propose effective and reliable I-V models with temperature dependence to explain the characteristic of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). Machine learning (ML) ...
LARGE-SIGNAL MODELING OF GAN HEMTS USING HYBRID GA-ANN, PSO-SVR, AND GPR-BASED APPROACHES

Jarndal, Anwar; Husain, Saddam; Hashmi, Mohammad S.; Ghannouchi, Fadhel M. (IEEE Journal of the Electron Devices Society, 2020-11-03)

This article presents an extensive study and demonstration of efficient electrothermal largesignal GaN HEMT modeling approaches based on combined techniques of Genetic Algorithm (GA) with Artificial Neural Networks (ANN), ...