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dc.contributor.author | Bhowmick, M.![]() |
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dc.contributor.author | Ullrich, B.![]() |
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dc.contributor.author | X i, H.![]() |
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dc.contributor.author | Flores, D.A.![]() |
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dc.date.accessioned | 2015-10-29T08:30:58Z | |
dc.date.available | 2015-10-29T08:30:58Z | |
dc.date.issued | 2014 | |
dc.identifier.isbn | 9786018046728 | |
dc.identifier.uri | http://nur.nu.edu.kz/handle/123456789/580 | |
dc.description.abstract | Comprehensive knowledge of the optical properties, particularly of the room temperature (RT) photoluminescence (PL), of ZnO is essential for the future employment of this wideband gap (~3.3 eV at 300 K) II-VI compound semiconductor in photonic and optoelectronic device structures [1]. Hence, vigorous research activities on ZnO thin films, epilayers, and crystals took place during the last two decades, encompassing a vast variety of effects and phenomena such as birefringence, photocurrent, PL including sub-band gap emission, reflectance, transmittance, excitonic properties, Raman modes, and absorption edge steepness [1-4]. However, despite that large body of knowledge and its essential importance for light emitting processes, a discussion of the ZnO PL lineshape is not found in the literature [5]. | ru_RU |
dc.language.iso | en | ru_RU |
dc.publisher | Nazarbayev University | ru_RU |
dc.subject | photoluminescence | ru_RU |
dc.subject | ZnO | ru_RU |
dc.subject | electron concentration | ru_RU |
dc.subject | spectroscopy | ru_RU |
dc.subject | Raman modes | ru_RU |
dc.title | Estimation of carrier life time from intrinsic photoluminescence of ZnO | ru_RU |
dc.type | Abstract | ru_RU |