Intrinsic photoluminescence Stokes shift in semiconductors demonstrated by thin-film CdS formed with pulsed-laser deposition

Ullrich, B.; Ariza-Flores, D.; Bhowmick, M.

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dc.contributor.author	Ullrich, B.
dc.contributor.author	Ariza-Flores, D.
dc.contributor.author	Bhowmick, M.
dc.creator	B., Ullrich
dc.date.accessioned	2017-12-20T08:18:32Z
dc.date.available	2017-12-20T08:18:32Z
dc.date.issued	2014-05-02
dc.identifier	DOI:10.1016/j.tsf.2014.02.047
dc.identifier.citation	B. Ullrich, D. Ariza-Flores, M. Bhowmick, Intrinsic photoluminescence Stokes shift in semiconductors demonstrated by thin-film CdS formed with pulsed-laser deposition, In Thin Solid Films, Volume 558, 2014, Pages 24-26	en_US
dc.identifier.issn	00406090
dc.identifier.uri	https://www.sciencedirect.com/science/article/pii/S0040609014001825
dc.identifier.uri	http://nur.nu.edu.kz/handle/123456789/2960
dc.description.abstract	Abstract While not reported in the literature, by employing highly oriented, semi-insulating, thin-film CdS as test material, we present the observation of the intrinsic photoluminescence Stokes shift in a semiconductor. Analysis of Raman peaks, transmission, reflection, and photoluminescence shows that during band-to-band emission at room temperature one-to-two longitudinal optical phonons with energy of 39.8meV are emitted. The result is confirmed by the theoretically expected Huang–Rhys factor.	en_US
dc.language.iso	en	en_US
dc.publisher	Thin Solid Films	en_US
dc.relation.ispartof	Thin Solid Films
dc.subject	Stokes shift	en_US
dc.subject	Pulsed-laser deposition	en_US
dc.subject	Thin-film CdS	en_US
dc.subject	Huang–Rhys factor	en_US
dc.subject	Band gap	en_US
dc.subject	Raman spectroscopy	en_US
dc.subject	Phonons	en_US
dc.title	Intrinsic photoluminescence Stokes shift in semiconductors demonstrated by thin-film CdS formed with pulsed-laser deposition	en_US
dc.type	Article	en_US
dc.rights.license	Copyright © 2014 Elsevier B.V. All rights reserved.
elsevier.identifier.doi	10.1016/j.tsf.2014.02.047
elsevier.identifier.eid	1-s2.0-S0040609014001825
elsevier.identifier.pii	S0040-6090(14)00182-5
elsevier.identifier.scopusid	84898788484
elsevier.volume	558
elsevier.coverdate	2014-05-02
elsevier.coverdisplaydate	2 May 2014
elsevier.startingpage	24
elsevier.endingpage	26
elsevier.openaccess	0
elsevier.openaccessarticle	false
elsevier.openarchivearticle	false
elsevier.teaser	While not reported in the literature, by employing highly oriented, semi-insulating, thin-film CdS as test material, we present the observation of the intrinsic photoluminescence Stokes shift in a semiconductor....
elsevier.aggregationtype	Journal
workflow.import.source	science