A simple efficient method of nanofilm-on-bulk-substrate thermal conductivity measurement using Raman thermometry

Abstract

In contrast to typical Raman thermometry applied to suspended nano-membranes, this study introduces a fast and simple method to measure the thermal conductivity of mono- and nanocrystalline silicon films deposited on quartz substrates. The approach exploits the linear relationship between laser-induced Raman peak downshift (ΔT) and laser power (P), allowing determination of thermal conductivity (k) even in films thicker than the phonon mean free path (Λ). The influence of thermal boundary resistance was found negligible under these conditions. The method is highly efficient, enabling measurements on dozens of films within an hour.