Poborchii, Vladimir; Morita, Yukinori; Tada, Tetsuya; Geshev, Pavel I.; Utegulov, Zhandos; Volkov, Alexey
(Journal of Applied Physics, 2016-04)
We have fabricated Si-on-insulator (SOI) layers with a thickness h1 of a few nanometers and
examined them by Raman spectroscopy with 363.8 nm excitation. We have found that phonon and
electron confinement play important ...