Caffrey, DavidZhussupbekova, AinurVijayaraghavan, Rajani K.Ainabayev, ArdakKaisha, AitkazySugurbekova, GulnarShvets, Igor V.Fleischer, Karsten2020-03-182020-03-182020-01-07Caffrey, D., Zhussupbekova, A., Vijayaraghavan, R. K., Ainabayev, A., Kaisha, A., Sugurbekova, G., … Fleischer, K. (2020). Crystallographic characterisation of ultra-thin, or amorphous transparent conducting oxides-the case for Raman spectroscopy. Materials, 13(2). https://doi.org/10.3390/ma13020267https://doi.org/10.3390/ma13020267http://nur.nu.edu.kz/handle/123456789/4531The electronic and optical properties of transparent conducting oxides (TCOs) are closely linked to their crystallographic structure on a macroscopic (grain sizes) and microscopic (bond structure) level. With the increasing drive towards using reduced film thicknesses in devices and growing interest in amorphous TCOs such as n-type InGaZnO4 (IGZO), ZnSnO3 (ZTO), p-type CuxCrO2, or ZnRh2O4, the task of gaining in-depth knowledge on their crystal structure by conventional X-ray diffraction-based measurements are becoming increasingly difficult. We demonstrate the use of a focal shift based background subtraction technique for Raman spectroscopy specifically developed for the case of transparent thin films on amorphous substrates. Using this technique we demonstrate, for a variety of TCOs CuO, a-ZTO, ZnO:Al), how changes in local vibrational moenAttribution-NonCommercial-ShareAlike 3.0 United Statestransparent conducting oxideTCORaman spectroscopyamorphous oxideoxide electronicsbackground subtractionArticle