Yu, XiaoShen, JieZhang, JieZhong, HaowenCui, XiaojunLiang, GuoyingYan, ShaZhang, GaolongZhang, XiaofuLe, Xiaoyun2016-11-042016-11-042016-07-18Yu Xiao., Shen Jie., Zhang Jie., Zhong Haowen., Cui Xiaojun., Liang Guoying., Yan Sha., Zhang Gaolong., Zhang Xiaofu., Le Xiaoyun., (2016) Study of Peeling of Single Crystal Silicon by Intense Pulsed Ion Beam. 21st International Symposium on Heavy Ion Inertial Fusion. Book of Abstracts. http://nur.nu.edu.kz/handle/123456789/1802http://nur.nu.edu.kz/handle/123456789/1802The surface peeling process induced by intense pulsed ion beam (IPIB) irradiation was studied. Single crystal silicon specimens were treated by IPIB with accelerating voltage of 350 kV current density of 130 A/cm2. It is observed that under smaller numbers of IPIB shots, the surface may undergo obvious melting and evaporation...enAttribution-NonCommercial-ShareAlike 3.0 United Statesstudy of peeling of single crystal siliconion beamResearch Subject Categories::NATURAL SCIENCES::Physics::Elementary particle physicsStudy of Peeling of Single Crystal Silicon by Intense Pulsed Ion BeamAbstract