Insepov, Z.Terasawa, M.Takayama, K.2017-09-272017-09-272008Insepov, Z., Terasawa, M., & Takayama, K. (2008). Surface erosion and modification by highly charged ions. Physical Review A, 77(6), 062901.http://nur.nu.edu.kz/handle/123456789/2727Analyses were conducted of various models and mechanisms of highly charged ion HCI and swift-heavy ion energy transfer into a solid target, such as hollow atom formation, charge screening, neutralization, shock wave generation, crater formation, and sputtering. A plasma model of space charge neutralization based on impact ionization of semiconductors at high electric fields was developed and applied to analyze HCI impacts on Si and W. Surface erosion of semiconductor and metal surfaces caused by HCI bombardments were studied by using a molecular dynamics simulation method, and the results were compared with experimental sputtering data.enOpen Access - the content is available to the general publicAttribution-NonCommercial-ShareAlike 3.0 United Stateshighly charged ion (HCI)surface erosionArticle