Dikhanbayev, K.K.Shabdan, Ye.Sagidolda, Ye.Bayganatova, Sh. B.Mussabek, G. K.Zhumatova, Sh.A.2020-11-062020-11-062020-08http://nur.nu.edu.kz/handle/123456789/5085As is known, a layer with a dielectric coating remains the standard of a photoelectric converter and many research groups are studying various alternative methods to achieve an antireflection effect in silicon for photovoltaic and other optoelectronic applications [1]. Some of these methods include electrochemical etching [2], sol-gel deposition [3], magnetron sputtering of metal oxide films [4], and anisotropic etching [5]. Ready-made structures with a p-n junction were used as the initial substrate, the specific resistivity of the n+ layer was 0.008-0.01 Ohm∙cm and the total plate thickness was 300 μm. Then, the front side of the sample is chemically activated in a solution of 0.4 mM, HAuCl4 for 3-5 s, after which it is thoroughly washed in deionized water. The output parameters of solar cells were determined from the characteristics. In particular, open circuit voltage Uoc = 610 mV, short-circuit current Isc = 32 mA / cm2, duty cycle ξ = 0.77, light emission power Pmax = 100 mWt /cm2, efficiency is ~ 15.03%.enAttribution-NonCommercial-ShareAlike 3.0 United Statessilicon solar cellsgoldantireflection effectResearch Subject Categories::TECHNOLOGYAbstract