Insepov, Z.Aoki, T.Matsuo, J.Yamada, I.2017-09-262017-09-261999-12Zinetulla Insepov, T Aoki, J Matsuo, I Yamada. 1999/12. Computer simulation of decaborane implantation and rapid thermal annealing. IEEE. Ion Implantation Technology Proceedings, 1998 International Conferencehttp://nur.nu.edu.kz/handle/123456789/2695Molecular Dynamics (MD) and Metropolis Monte- Carlo (MMC) models of monomer B and decaborane implantation into Si and following rapid thermal annealing (RTA) processes have been developed. The implanted B dopant and Si-atomic diffusion coefficients were obtained for different substrate temperatures. The simulation of decaborane ion implantation has revealed the formation of an amorphized area in a subsurface region, much larger than that of a single B+ implantation, with the same energy per ion. The calculated B diffusion coefficient has values between 10-'2-10-1c0m 2 s" which agrees well with experimental values obtained for an equilibrium B dopant in Si. Our calculations have shown an unusual temperature dependence with two different activation energies. Low activation energy, less than 0.2 eV, was obtained for a low temperature region, and a higher activation energy, - 3 eV, for a higher-temperature region which is typical for the RTA processing. The higher activation energy is comparable with the equilibrium activation energy, 3.4 eV, for B diffusion in Si. The diffusivity for Si atoms was obtained to be in the interval - l0l2 cm2 s-I. In our present simulation for decaborane cluster implantation into Si, we have not observed the TED phenomenon.enOpen Access - the content is available to the general publicAttribution-NonCommercial-ShareAlike 3.0 United StatesMolecular Dynamics (MD)computer simulationdecaborane implantationrapid thermal annealing (RTA)Conference Paper