Low temperature synthesis of graphene nanocomposites using surface passivation of porous silicon nanocrystallites with carbon atoms

Tynyshtykbayev, Kurbangali B.Ainabаyev, ArdakKononenko, O.ChichkovInsepov, Z.2019-01-312019-01-312019-02-2809259635https://www.sciencedirect.com/science/article/pii/S0925963518305569http://nur.nu.edu.kz/handle/123456789/3715Abstract This work presents the experimental investigation of the synthesis of graphene carbon nanocomposites (CNC-G) by carbonization of porous silicon (PS) using CVD method at low temperature of T = 350–500 °C. The low-temperature synthesis of CNC-G is explained by a low melting temperature of porous silicon nanocrystallites (nc-PS) formed during electrochemical etching.enAttribution-NonCommercial-ShareAlike 3.0 United StatesLow temperature synthesis of graphene nanocomposites using surface passivation of porous silicon nanocrystallites with carbon atomsArticle© 2018 Elsevier B.V. All rights reserved.