Ullrich, B.Ariza-Flores, D.Bhowmick, M.2017-12-202017-12-202014-05-02B. Ullrich, D. Ariza-Flores, M. Bhowmick, Intrinsic photoluminescence Stokes shift in semiconductors demonstrated by thin-film CdS formed with pulsed-laser deposition, In Thin Solid Films, Volume 558, 2014, Pages 24-2600406090https://www.sciencedirect.com/science/article/pii/S0040609014001825http://nur.nu.edu.kz/handle/123456789/2960Abstract While not reported in the literature, by employing highly oriented, semi-insulating, thin-film CdS as test material, we present the observation of the intrinsic photoluminescence Stokes shift in a semiconductor. Analysis of Raman peaks, transmission, reflection, and photoluminescence shows that during band-to-band emission at room temperature one-to-two longitudinal optical phonons with energy of 39.8meV are emitted. The result is confirmed by the theoretically expected Huang–Rhys factor.enStokes shiftPulsed-laser depositionThin-film CdSHuang–Rhys factorBand gapRaman spectroscopyPhononsArticleCopyright © 2014 Elsevier B.V. All rights reserved.