Obtaining of gallium nitride thin films

dc.contributor.author	Urazbayev, A.
dc.contributor.author	Bolat, R.
dc.contributor.author	Sabitova, A.
dc.contributor.author	Tikhonov, A.
dc.date.accessioned	2015-11-03T10:55:42Z
dc.date.available	2015-11-03T10:55:42Z
dc.date.issued	2014
dc.identifier.isbn	9786018046728
dc.identifier.uri	http://nur.nu.edu.kz/handle/123456789/712
dc.description.abstract	The project executed by a joint team of the Nazarbayev University, Kazakhstan, Lawrence Berkeley National Laboratory, Berkeley, California. The project will start by developing the HiPIMS technology for GaN in an existing and upgraded vacuum chamber at partner laboratory (LBNL). This includes the design and modification of magnetrons for sputtering from liquid gallium target. In a parallel effort, components for a second deposition system will be purchased and a custom system will be developed for deployment at Astana.	ru_RU
dc.language.iso	en	ru_RU
dc.publisher	Nazarbayev University	ru_RU
dc.subject	gallium	ru_RU
dc.subject	optoelectronics	ru_RU
dc.subject	photovoltaics	ru_RU
dc.subject	electrical properties	ru_RU
dc.subject	product processing	ru_RU
dc.subject	technologies	ru_RU
dc.subject	magnetrons	ru_RU
dc.title	Obtaining of gallium nitride thin films	ru_RU
dc.type	Abstract	ru_RU